RN4987FE,LF(CT
Toshiba Semiconductor and Storage
TRANS PREBIAS 1NPN 1PNP 50V ES6
Preisstaffeln
- Verpackungseinheit: 1, 0,04 € net
Technische Daten
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
|---|---|
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Resistor - Base (R1) | 10kOhms |
| Resistor - Emitter Base (R2) | 47kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 500nA |
| Frequency - Transition | 250MHz, 200MHz |
| Power - Max | 100mW |
| Mounting Type | Surface Mount |
| Package / Case | SOT-563, SOT-666 |
| Supplier Device Package | ES6 |