SSM6L56FE,LM
Toshiba Semiconductor and Storage
MOSFET N/P-CH 20V 0.8A ES6
Price breaks
- package multiple: 1, €0.06 net
Parameters
| Technology | MOSFET (Metal Oxide) |
|---|---|
| Configuration | N and P-Channel |
| FET Feature | Logic Level Gate, 1.5V Drive |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 800mA (Ta) |
| Rds On (Max) @ Id, Vgs | 235mOhm @ 800mA, 4.5V, 390mOhm @ 800mA, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 1nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 55pF @ 10V, 100pF @ 10V |
| Power - Max | 150mW (Ta) |
| Operating Temperature | 150°C |
| Mounting Type | Surface Mount |
| Package / Case | SOT-563, SOT-666 |
| Supplier Device Package | ES6 |