SSM6N7002KFU,LF
Toshiba Semiconductor and Storage
MOSFET 2N-CH 60V 0.3A US6
Price breaks
- package multiple: 1, €0.03 net
Parameters
| Technology | MOSFET (Metal Oxide) |
|---|---|
| Configuration | 2 N-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 300mA |
| Rds On (Max) @ Id, Vgs | 1.5Ohm @ 100mA, 10V |
| Vgs(th) (Max) @ Id | 2.1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 0.6nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 40pF @ 10V |
| Power - Max | 285mW |
| Operating Temperature | 150°C |
| Mounting Type | Surface Mount |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Supplier Device Package | US6 |